PDEU2319Y mosfets equivalent, p-channel mosfets.
* -20V,-400mA, RDS(ON) =600mΩ@VGS = -4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for -1.5V Gate Drive Applicatio.
SOT523 Pin Configuration
D
D
S G
G
S
BVDSS -20V
RDSON 600m
ID -400mA
Features
* -20V,-400mA, RDS(ON) =600.
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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